inchange semiconductor product specification silicon pnp power transistors 2SB1257 description ? with to-220f package ? complement to type 2sd2014 ?high dc current gain ? darlington applications ? driver for solenoid ,relay and motor and general purpose pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -6 v i c collector current -4 a i cm collector current-peak -6 a i b base current -1 a p c collector dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SB1257 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -60 v v cesat collector-emitter saturation voltage i c =-3a; i b =-6ma -1.5 v v besat base-emitter saturation voltage i c =-3a; i b =-6ma -2.0 v i cbo collector cut-off current v cb =-60v; i e =0 -10 | a i ebo emitter cut-off current v eb =-6v; i c =0 -10 | a h fe dc current gain i c =-3a ; v ce =-4v 2000 f t transition frequency i e =0.2a ; v ce =-12v 150 mhz c ob collector output capacitance i e =0; f=1mhz;v cb =-10v 75 pf switching times t on turn-on time 0.4 | s t s storage time 0.8 | s t f fall time i c =-3a; i b1 =-i b2 =-10ma v cc =-30v ,r l =10 |? 0.6 | s
inchange semiconductor product specification 3 silicon pnp power transistors 2SB1257 package outline fig.2 outline dimensions
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